演讲嘉宾-高力波

高力波
南京大学物理学院教授
  高力波,南京大学物理学院教授,2014年入选国家高层次青年人才,2016年入选江苏省双创人才,2019年入选江苏省杰青项目。2006年本科毕业于大连理工大学材料系;2011年博士毕业于中国科学院金属研究所,师从成会明院士;2011年—2015年,新加坡国立大学石墨烯研究中心从事博士后研究,合作导师Loh Kian Ping。其研究经历一直从事石墨烯与其他二维材料的相关研究,主要为材料制备的新方法研究。曾以第一作者、通讯作者身份,发表Nature正刊、子刊等多篇论文,迄今共发表SCI收录论文35篇,引用超过9000余次。
演讲题目:Proton Assisted Growth of Ultra-flat Graphene Films
主题会场
开始时间
结束时间
内容摘要

Graphene films by chemical vapor deposition (CVD) draw much attention for the future applications with their extraordinary properties1,2. However, wrinkles formed by the strong coupling to the growing substrates inevitably emerge and limit the large-scale homogeneity3,4. Here, we develop CVD method to grow ultra-flat graphene films with wrinkle-free and quasi-suspending features5. The formed wrinkles by traditional CVD can also be reduced by these processes, and some of them even disappear due to the decoupled van der Waals interactions and the probably increased surface distance. The ultra-flat graphene films show V-shape Dirac cone and linear dispersion at the atomic plane or across the atomic step, confirming their homogenous decoupling. The ultra-flatness of the graphene films ensures their surfaces easy-clean after wet transfer process, and a robust quantum Hall effect even appears in a device of 100 μm linewidth at room temperature. These CVD grown graphene films should retain their intrinsic extraordinary performances to large extent. 

References
[1] Bae, S. K. et al. Roll-to-roll production of 30-inch graphene films for transparent electrodes. Nat. Nanotech. 5, 574-578 (2010).
[2] Lee, J. H. et al. Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium. Science 344, 286-289 (2014).
[3] Zhu, W. et al. Structure and electronic transport in graphene wrinkles. Nano Lett. 12, 3431-3436 (2012).
[4] Bronsgeest, M. S. et al. Strain Relaxation in CVD Graphene: Wrinkling with Shear Lag. Nano Lett. 15, 5098-5104 (2015).
[5] Yuan, G. W. et al. Proton Assisted Growth of Ultra-flat Graphene Films. Nature 577, 204–208 (2020).

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凯发_高力波

凯发

演讲嘉宾-高力波

高力波
南京大学物理学院教授
  高力波,南京大学物理学院教授,2014年入选国家高层次青年人才,2016年入选江苏省双创人才,2019年入选江苏省杰青项目。2006年本科毕业于大连理工大学材料系;2011年博士毕业于中国科学院金属研究所,师从成会明院士;2011年—2015年,新加坡国立大学石墨烯研究中心从事博士后研究,合作导师Loh Kian Ping。其研究经历一直从事石墨烯与其他二维材料的相关研究,主要为材料制备的新方法研究。曾以第一作者、通讯作者身份,发表Nature正刊、子刊等多篇论文,迄今共发表SCI收录论文35篇,引用超过9000余次。
演讲题目:Proton Assisted Growth of Ultra-flat Graphene Films
主题会场
开始时间
结束时间
内容摘要

Graphene films by chemical vapor deposition (CVD) draw much attention for the future applications with their extraordinary properties1,2. However, wrinkles formed by the strong coupling to the growing substrates inevitably emerge and limit the large-scale homogeneity3,4. Here, we develop CVD method to grow ultra-flat graphene films with wrinkle-free and quasi-suspending features5. The formed wrinkles by traditional CVD can also be reduced by these processes, and some of them even disappear due to the decoupled van der Waals interactions and the probably increased surface distance. The ultra-flat graphene films show V-shape Dirac cone and linear dispersion at the atomic plane or across the atomic step, confirming their homogenous decoupling. The ultra-flatness of the graphene films ensures their surfaces easy-clean after wet transfer process, and a robust quantum Hall effect even appears in a device of 100 μm linewidth at room temperature. These CVD grown graphene films should retain their intrinsic extraordinary performances to large extent. 

References
[1] Bae, S. K. et al. Roll-to-roll production of 30-inch graphene films for transparent electrodes. Nat. Nanotech. 5, 574-578 (2010).
[2] Lee, J. H. et al. Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium. Science 344, 286-289 (2014).
[3] Zhu, W. et al. Structure and electronic transport in graphene wrinkles. Nano Lett. 12, 3431-3436 (2012).
[4] Bronsgeest, M. S. et al. Strain Relaxation in CVD Graphene: Wrinkling with Shear Lag. Nano Lett. 15, 5098-5104 (2015).
[5] Yuan, G. W. et al. Proton Assisted Growth of Ultra-flat Graphene Films. Nature 577, 204–208 (2020).

关于主办方

联系我们
400-110-3655   

E-mail: meeting@c-gia.cn   meeting01@c-gia.cn

参展电话:13646399362(苏老师)

主讲申请:19991951101(王老师)

官方微信订阅号
Copyright © 中国国际石墨烯创新大会 版权所有     运营机构:北京现代华清材料科技发展有限责任公司
grapchina.org 京ICP备10026874号-12   grapchina.cn 京ICP备10026874号-23
京公网安备 11010802023402号
分享到: