Graphene attracts great attention as the most appropriate candidate to replace the traditional silicon material for future electronic devices, especially in radio-frequency applications, due to its unique band structure, the high electron mobility and high carrier saturation velocity. However, its unique material properties make it difficult to improve the performance of graphene field-effect transistors. Here we investigate the effects of scattering, the graphene-metal contact, the dielectric film on the graphene field-effect transistors. We further give the ways to improve the performance of the transistors.

Graphene attracts great attention as the most appropriate candidate to replace the traditional silicon material for future electronic devices, especially in radio-frequency applications, due to its unique band structure, the high electron mobility and high carrier saturation velocity. However, its unique material properties make it difficult to improve the performance of graphene field-effect transistors. Here we investigate the effects of scattering, the graphene-metal contact, the dielectric film on the graphene field-effect transistors. We further give the ways to improve the performance of the transistors.