演讲嘉宾-郝玲

郝玲
英国国家物理实验室(NPL) 教授

郝玲是英国国家物理实验室(NPL)的教授。

郝玲教授在北京师范大学相继取得了物理学学士学位和固体物理学硕士学位。1992年她在英国斯特拉斯克莱德大学的物理和应用物理学院攻读博士,1995年以超导装置中的噪音研究取得了博士学位。自那以后,她便在英国国家物理实验室工作。

她主要研究纳米科学,超导电子学与微波技术的精密测量,主攻纳米机电系统(NEMS)谐振器的单粒子测量。她还致力于低维碳,碳纳米管、石墨烯等的传输测量。她已发表100多篇学术期刊论文在和两个书本章节。

她是英国物理研究所的研究员和特许物理学家。她也是伦敦帝国学院的客座教授,是物理研究所超导委员会的一员。

演讲题目:(Oral) Graphene Applications and Characterization at Microwave Frequencies
主题会场
开始时间2014-09-01 09:00:00
结束时间2014-09-03 17:00:00
内容摘要

Little work has been reported on the properties and applications of graphene at microwave frequencies. We discuss a novel microwave characterization method for graphene films and also near-field microwave excitation and readout as an important technique for graphene nanomechanical systems (NEMS) resonators which promise a range of sensing applications. Many different methods for preparing graphene thin films have appeared. There is a great variability in the quality of films prepared, and even when identical methods are used the film properties between successive batches may be quite different. Our non-contact method for conductivity and sheet resistance measurements of graphene uses a high Q microwave dielectric resonator perturbation technique to provide fast and accurate measurement non-invasively. The dynamic range of the microwave conductivity measurements makes this technique sensitive to a wide variety of imperfections and impurities, without the need for film patterning or contact fabrication. The graphene samples are supported on a low-loss dielectric substrate, suspended in the near-field region of a small high Q sapphire puck microwave resonator. The presence of the graphene perturbs both centre frequency and Q value of the microwave resonator.  The measured data is interpreted in terms of real and imaginary components of the permittivity, and by calculation, the conductivity and sheet resistance of the graphene.  Results are presented for graphene samples grown by three different methods:  reduced graphene oxide (GO), chemical vapour deposition (CVD) and epitaxial graphene on SiC. We also report fabrication and measurement of a number of different graphene mechanical resonators based on transferred material onto different lithographically patterned substrates. CVD grown graphene films are of increasingly good quality and, following growth on a metal thin film catalyst, can then be transferred to any arbitrary supporting substrate. The transfer process is critical. These resonators are typically circular drum membranes with diameters ranging from 0.5 to 40 micrometres. We report experimental data on these drums using a variety of microwave excitation and readout methods. An important issue is that there is strong coupling between graphene and microwave fields. This relates to the relatively close matching of the impedance of free space, or a confined geometry like a microwave resonator, and the sheet resistance of high quality graphene,[1] making the microwave method particularly suitable for application to graphene NEMS resonator based sensors.

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联系我们
400-110-3655   

E-mail: meeting@c-gia.cn   meeting01@c-gia.cn

参展电话:13646399362(苏老师)

主讲申请:19991951101(王老师)

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凯发_郝玲

凯发

演讲嘉宾-郝玲

郝玲
英国国家物理实验室(NPL) 教授

郝玲是英国国家物理实验室(NPL)的教授。

郝玲教授在北京师范大学相继取得了物理学学士学位和固体物理学硕士学位。1992年她在英国斯特拉斯克莱德大学的物理和应用物理学院攻读博士,1995年以超导装置中的噪音研究取得了博士学位。自那以后,她便在英国国家物理实验室工作。

她主要研究纳米科学,超导电子学与微波技术的精密测量,主攻纳米机电系统(NEMS)谐振器的单粒子测量。她还致力于低维碳,碳纳米管、石墨烯等的传输测量。她已发表100多篇学术期刊论文在和两个书本章节。

她是英国物理研究所的研究员和特许物理学家。她也是伦敦帝国学院的客座教授,是物理研究所超导委员会的一员。

演讲题目:(Oral) Graphene Applications and Characterization at Microwave Frequencies
主题会场
开始时间2014-09-01 09:00:00
结束时间2014-09-03 17:00:00
内容摘要

Little work has been reported on the properties and applications of graphene at microwave frequencies. We discuss a novel microwave characterization method for graphene films and also near-field microwave excitation and readout as an important technique for graphene nanomechanical systems (NEMS) resonators which promise a range of sensing applications. Many different methods for preparing graphene thin films have appeared. There is a great variability in the quality of films prepared, and even when identical methods are used the film properties between successive batches may be quite different. Our non-contact method for conductivity and sheet resistance measurements of graphene uses a high Q microwave dielectric resonator perturbation technique to provide fast and accurate measurement non-invasively. The dynamic range of the microwave conductivity measurements makes this technique sensitive to a wide variety of imperfections and impurities, without the need for film patterning or contact fabrication. The graphene samples are supported on a low-loss dielectric substrate, suspended in the near-field region of a small high Q sapphire puck microwave resonator. The presence of the graphene perturbs both centre frequency and Q value of the microwave resonator.  The measured data is interpreted in terms of real and imaginary components of the permittivity, and by calculation, the conductivity and sheet resistance of the graphene.  Results are presented for graphene samples grown by three different methods:  reduced graphene oxide (GO), chemical vapour deposition (CVD) and epitaxial graphene on SiC. We also report fabrication and measurement of a number of different graphene mechanical resonators based on transferred material onto different lithographically patterned substrates. CVD grown graphene films are of increasingly good quality and, following growth on a metal thin film catalyst, can then be transferred to any arbitrary supporting substrate. The transfer process is critical. These resonators are typically circular drum membranes with diameters ranging from 0.5 to 40 micrometres. We report experimental data on these drums using a variety of microwave excitation and readout methods. An important issue is that there is strong coupling between graphene and microwave fields. This relates to the relatively close matching of the impedance of free space, or a confined geometry like a microwave resonator, and the sheet resistance of high quality graphene,[1] making the microwave method particularly suitable for application to graphene NEMS resonator based sensors.

关于主办方

联系我们
400-110-3655   

E-mail: meeting@c-gia.cn   meeting01@c-gia.cn

参展电话:13646399362(苏老师)

主讲申请:19991951101(王老师)

官方微信订阅号
Copyright © 中国国际石墨烯创新大会 版权所有     运营机构:北京现代华清材料科技发展有限责任公司
grapchina.org 京ICP备10026874号-12   grapchina.cn 京ICP备10026874号-23
京公网安备 11010802023402号
分享到: