Graphene is a flat monolayer of carbon atoms tightly packed into a two-dimensional (2D) honeycomb lattice. Various methods have been explored for synthesis of graphene during recent years. Here we report a mechanism of chemical growth and deposition on Silicon substrate suitable for industrial and low cost mass-production of graphene. In this method, we obtain graphene oxide (GO) in solution phase by means of chemical routes. In comparison with Hummers’ method, we use an extra ultrasonic-step after Graphite oxidization to completely separate GO sheets and get a fewer layer of Graphene. After producing GO solution, the next and the most important step is to deposit and reduce of graphene oxide on a substrate in order to get a graphene sheet. As most of the semiconductor devices are based on silicon substrate, our aim is to find a solution to deposit high-quality graphene layer on hydrophobic silicon substrate. To get few layer graphene, we need to dilute graphene oxide in deionized water but the problem is hydrophobicity of silicon substrate. To get a uniform deposition, we have spin coated the samples, but in this method, the solvent should have a moderate viscosity. To surmount this problem, we have used of Ethylene glycol as the solvent. To have a more hydrophilic Silicon substrate, we activated the surface by Oxygen plasma and RCA cleaning method. We tested the following methods and compared the results: 1. Direct and spin coating deposition of high concentration GO, 2. Direct and spin coating deposition of diluted GO, 3. Direct and spin coating of Ethylene glycol solvent deposition. The structure and properties of the obtained film were studied by means of SEM, EDX and AFM. We have reduced our GO coated samples by electrochemical method and 200°c annealing for 1 hour. The experiment results show that using RCA activation of Si substrate along with spin coating of ethylene glycol solvent of GO or high concentrated GO deionized water solvent, can get a high quality, uniform deposition of Graphene on Si substrate.

Graphene is a flat monolayer of carbon atoms tightly packed into a two-dimensional (2D) honeycomb lattice. Various methods have been explored for synthesis of graphene during recent years. Here we report a mechanism of chemical growth and deposition on Silicon substrate suitable for industrial and low cost mass-production of graphene. In this method, we obtain graphene oxide (GO) in solution phase by means of chemical routes. In comparison with Hummers’ method, we use an extra ultrasonic-step after Graphite oxidization to completely separate GO sheets and get a fewer layer of Graphene. After producing GO solution, the next and the most important step is to deposit and reduce of graphene oxide on a substrate in order to get a graphene sheet. As most of the semiconductor devices are based on silicon substrate, our aim is to find a solution to deposit high-quality graphene layer on hydrophobic silicon substrate. To get few layer graphene, we need to dilute graphene oxide in deionized water but the problem is hydrophobicity of silicon substrate. To get a uniform deposition, we have spin coated the samples, but in this method, the solvent should have a moderate viscosity. To surmount this problem, we have used of Ethylene glycol as the solvent. To have a more hydrophilic Silicon substrate, we activated the surface by Oxygen plasma and RCA cleaning method. We tested the following methods and compared the results: 1. Direct and spin coating deposition of high concentration GO, 2. Direct and spin coating deposition of diluted GO, 3. Direct and spin coating of Ethylene glycol solvent deposition. The structure and properties of the obtained film were studied by means of SEM, EDX and AFM. We have reduced our GO coated samples by electrochemical method and 200°c annealing for 1 hour. The experiment results show that using RCA activation of Si substrate along with spin coating of ethylene glycol solvent of GO or high concentrated GO deionized water solvent, can get a high quality, uniform deposition of Graphene on Si substrate.