演讲嘉宾-Juan José Palacios

Juan José Palacios
西班牙马德里自治大学
  Juan José Palacios教授1989年毕业了西班牙的马德里自治大学物理系。1993年由于他在半导体量子点的输运性质和分数量子霍尔效应的电子结构理论研究,他在同一所大学获得博士学位。Palacios教授在很多大学做过博士后研究员,如加拿大的全国研究理事会,美国的印第安纳大学和肯塔基大学。与其他主题相比,他更深入地探索了与Allan MacDonald合作的分数量子霍耳效应的多体物理,同时在涡旋物质和介观超导电性方面做了很多基础研究工作。Palacios教授在西班牙阿利坎特大学工作了将近十年,研究运输项目的量子计算。2009年以来Palacios教授专注于凝聚态物理(UAM)研究。2014年他创办了SIMUNE Atomistics公司,这是西班牙第一家提供材料科学相关产业计算服务的公司。Palacios教授的专长领域是凝聚态物理的理论和计算研究,随着石墨烯二维晶体的崛起,目前他也关注拓扑绝缘体,分子电子学和纳米电子学。他有130本以上的出版物,被引用超过4300次。他的h指数为35。
演讲题目:Atomic-scale control of graphene magnetism using hydrogen atoms
主题会场A03 石墨烯在柔性电子技术领域的应用
开始时间
结束时间
内容摘要

Isolated hydrogen atoms chemisorbed on graphene have been predicted to induce magnetic moments. Direct observation of these magnetic moments and their interactions as well as their manipulation still remains a major experimental challenge. Here I will show that the adsorption of a single hydrogen atom on graphene induces a magnetic moment characterized by a 20 meV spin-split state at the Fermi energy. Our scanning tunneling microscopy (STM) experiments, complemented by first-principles calculations, show that such a spin-polarized state is essentially localized on the carbon sublattice complementary to the one where the H atom is chemisorbed. This atomically modulated spin-texture, which extends several nanometers away from the H atom, drives the direct coupling between the magnetic moments at unusually long distances. Using the STM tip to manipulate H atoms with atomic precision, we are able to select the adsorption sites and tailor the magnetism of large graphene regions [1]. Furthermore, under the appropriate conditions a spontaneous adsorption of H on only one sublattice can be achieved [2] with its concomitant  long-range ferromagnetic order [3]. A proposal to use hydrogenated graphene as spin-polarized current injector, thus avoiding metal-contacts, will be presented.

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E-mail: meeting@c-gia.cn   meeting01@c-gia.cn

参展电话:13646399362(苏老师)

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凯发_Juan José Palacios

凯发

演讲嘉宾-Juan José Palacios

Juan José Palacios
西班牙马德里自治大学
  Juan José Palacios教授1989年毕业了西班牙的马德里自治大学物理系。1993年由于他在半导体量子点的输运性质和分数量子霍尔效应的电子结构理论研究,他在同一所大学获得博士学位。Palacios教授在很多大学做过博士后研究员,如加拿大的全国研究理事会,美国的印第安纳大学和肯塔基大学。与其他主题相比,他更深入地探索了与Allan MacDonald合作的分数量子霍耳效应的多体物理,同时在涡旋物质和介观超导电性方面做了很多基础研究工作。Palacios教授在西班牙阿利坎特大学工作了将近十年,研究运输项目的量子计算。2009年以来Palacios教授专注于凝聚态物理(UAM)研究。2014年他创办了SIMUNE Atomistics公司,这是西班牙第一家提供材料科学相关产业计算服务的公司。Palacios教授的专长领域是凝聚态物理的理论和计算研究,随着石墨烯二维晶体的崛起,目前他也关注拓扑绝缘体,分子电子学和纳米电子学。他有130本以上的出版物,被引用超过4300次。他的h指数为35。
演讲题目:Atomic-scale control of graphene magnetism using hydrogen atoms
主题会场A03 石墨烯在柔性电子技术领域的应用
开始时间
结束时间
内容摘要

Isolated hydrogen atoms chemisorbed on graphene have been predicted to induce magnetic moments. Direct observation of these magnetic moments and their interactions as well as their manipulation still remains a major experimental challenge. Here I will show that the adsorption of a single hydrogen atom on graphene induces a magnetic moment characterized by a 20 meV spin-split state at the Fermi energy. Our scanning tunneling microscopy (STM) experiments, complemented by first-principles calculations, show that such a spin-polarized state is essentially localized on the carbon sublattice complementary to the one where the H atom is chemisorbed. This atomically modulated spin-texture, which extends several nanometers away from the H atom, drives the direct coupling between the magnetic moments at unusually long distances. Using the STM tip to manipulate H atoms with atomic precision, we are able to select the adsorption sites and tailor the magnetism of large graphene regions [1]. Furthermore, under the appropriate conditions a spontaneous adsorption of H on only one sublattice can be achieved [2] with its concomitant  long-range ferromagnetic order [3]. A proposal to use hydrogenated graphene as spin-polarized current injector, thus avoiding metal-contacts, will be presented.

关于主办方

联系我们
400-110-3655   

E-mail: meeting@c-gia.cn   meeting01@c-gia.cn

参展电话:13646399362(苏老师)

主讲申请:19991951101(王老师)

官方微信订阅号
Copyright © 中国国际石墨烯创新大会 版权所有     运营机构:北京现代华清材料科技发展有限责任公司
grapchina.org 京ICP备10026874号-12   grapchina.cn 京ICP备10026874号-23
京公网安备 11010802023402号
分享到: