Prof. Ke Xu is the director of nano-characterization center, Suzhou Institute of Nano-tech and Nano-bionics, CAS. He received his B.S. and Master degree in material science at Xi’an Jiaotong University, and Ph.D. degree in Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences. His research area focused on III-nitride semiconductors, two dimensional material and related novel heterostructures. He systematically studied the growth behaviors of III-nitride semiconductors by MOCVD, MBE and HVPE. He found the important effects of crystal polarity on InN growth, and one of the main contributors find the narrow gap of InN. In recent years, he devoted to develop HVPE growth technology, succeeded in fabricating 2~4inch high quality GaN substrate for mass production. He found unusual contact properties of graphene with wide bandgap semiconductors, and investigated in acoustic properties of graphene on GaN. He has more than 80 peer-reviewed publications, and about 50 pending patents, delivered more than 20 invited talks in important conferences, such as ICNS-8, ICCG-16, E-MRS etc. He won China National Funds for Distinguished Young Scientists in 2013, and selected as “1000 talent program” member in 2012. He is also served as committee member of national “863” high-tech program.

Prof. Ke Xu is the director of nano-characterization center, Suzhou Institute of Nano-tech and Nano-bionics, CAS. He received his B.S. and Master degree in material science at Xi’an Jiaotong University, and Ph.D. degree in Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences. His research area focused on III-nitride semiconductors, two dimensional material and related novel heterostructures. He systematically studied the growth behaviors of III-nitride semiconductors by MOCVD, MBE and HVPE. He found the important effects of crystal polarity on InN growth, and one of the main contributors find the narrow gap of InN. In recent years, he devoted to develop HVPE growth technology, succeeded in fabricating 2~4inch high quality GaN substrate for mass production. He found unusual contact properties of graphene with wide bandgap semiconductors, and investigated in acoustic properties of graphene on GaN. He has more than 80 peer-reviewed publications, and about 50 pending patents, delivered more than 20 invited talks in important conferences, such as ICNS-8, ICCG-16, E-MRS etc. He won China National Funds for Distinguished Young Scientists in 2013, and selected as “1000 talent program” member in 2012. He is also served as committee member of national “863” high-tech program.