演讲嘉宾-Bingqing Wei

Bingqing Wei
美国特拉华大学 教授
Bingqing Wei is currently a professor in the Department of Mechanical Engineering at the University of Delaware, USA. 
His recent research focuses on controllable synthesis of macroscale nanocarbon architectures with 1-, 2-, and 3-dimensions; physical, chemical, electrochemical, and mechanical property characterizations of nanotubes; and energy storage device applications. His scholarly achievements in the field of nanomaterials and nanotechnology and, particularly in the research of carbon nanotubes are fully reflected from his 216 papers published in refereed international journals, including Nature and Science, more than 110 scientific conference presentations and 130 plus invited talks and seminars in academia and industry worldwide. His research work has been cited more than 10500 times by peer scientists with h-index of 53 and has also been highlighted many times in scientific journals, web journals and public media.

演讲题目:Anomalous Capacitive Behaviors in Graphene Oxide Based Solid State Supercapacitors
主题会场
开始时间
结束时间
内容摘要

Compared with lithium-ion batteries, supercapacitors exhibit several advantages, such as long cycle life, short charging time, light weight, and high power density. Graphene and/or graphene oxide-based carbon materials, as newly discovered members of carbon family, have drawn extensive interests on various research areas including as electrode materials for supercapacitors, because of their own high specific area, exceptional electric-conductivity, facile synthesis, etc. 
In this presentation, I am going to discuss our recent progresses in the development of solid-state supercapacitors from reduced graphene oxides (RGO) and our understandings on the charge storage mechanisms of the assembled supercapacitors. As well-known, substantial differences in charge storage mechanisms exist between dielectric capacitors (DC) and electrochemical capacitors (EC), resulting in orders of magnitude difference of stored charge density in them. However, if ionic diffusion, the major charge transport mechanism in ECs is confined within nanoscale dimensions such as the spacing between graphene oxide layers, the Helmholtz layers and diffusion layers will overlap, resulting in dismissible ionic diffusion. An interesting contradiction between appreciable energy density and unrecognizable ionic diffusion are observed in solid-state ECs made from reduced graphene oxide films that challenge the fundamental charge storage mechanisms proposed in such devices. A new capacitive model is therefore proposed, which combines the two distinct charge storage mechanisms of DCs and ECs, to explain the contradiction, of high storage capacity yet poor ionic diffusion, seen in graphene oxide based supercapacitors.

关于主办方

联系我们
400-110-3655   

E-mail: meeting@c-gia.cn   meeting01@c-gia.cn

参展电话:13646399362(苏老师)

主讲申请:19991951101(王老师)

官方微信订阅号
Copyright © 中国国际石墨烯创新大会 版权所有     运营机构:北京现代华清材料科技发展有限责任公司
grapchina.org 京ICP备10026874号-12   grapchina.cn 京ICP备10026874号-23
京公网安备 11010802023402号
分享到:
凯发_Bingqing Wei

凯发

演讲嘉宾-Bingqing Wei

Bingqing Wei
美国特拉华大学 教授
Bingqing Wei is currently a professor in the Department of Mechanical Engineering at the University of Delaware, USA. 
His recent research focuses on controllable synthesis of macroscale nanocarbon architectures with 1-, 2-, and 3-dimensions; physical, chemical, electrochemical, and mechanical property characterizations of nanotubes; and energy storage device applications. His scholarly achievements in the field of nanomaterials and nanotechnology and, particularly in the research of carbon nanotubes are fully reflected from his 216 papers published in refereed international journals, including Nature and Science, more than 110 scientific conference presentations and 130 plus invited talks and seminars in academia and industry worldwide. His research work has been cited more than 10500 times by peer scientists with h-index of 53 and has also been highlighted many times in scientific journals, web journals and public media.

演讲题目:Anomalous Capacitive Behaviors in Graphene Oxide Based Solid State Supercapacitors
主题会场
开始时间
结束时间
内容摘要

Compared with lithium-ion batteries, supercapacitors exhibit several advantages, such as long cycle life, short charging time, light weight, and high power density. Graphene and/or graphene oxide-based carbon materials, as newly discovered members of carbon family, have drawn extensive interests on various research areas including as electrode materials for supercapacitors, because of their own high specific area, exceptional electric-conductivity, facile synthesis, etc. 
In this presentation, I am going to discuss our recent progresses in the development of solid-state supercapacitors from reduced graphene oxides (RGO) and our understandings on the charge storage mechanisms of the assembled supercapacitors. As well-known, substantial differences in charge storage mechanisms exist between dielectric capacitors (DC) and electrochemical capacitors (EC), resulting in orders of magnitude difference of stored charge density in them. However, if ionic diffusion, the major charge transport mechanism in ECs is confined within nanoscale dimensions such as the spacing between graphene oxide layers, the Helmholtz layers and diffusion layers will overlap, resulting in dismissible ionic diffusion. An interesting contradiction between appreciable energy density and unrecognizable ionic diffusion are observed in solid-state ECs made from reduced graphene oxide films that challenge the fundamental charge storage mechanisms proposed in such devices. A new capacitive model is therefore proposed, which combines the two distinct charge storage mechanisms of DCs and ECs, to explain the contradiction, of high storage capacity yet poor ionic diffusion, seen in graphene oxide based supercapacitors.

关于主办方

联系我们
400-110-3655   

E-mail: meeting@c-gia.cn   meeting01@c-gia.cn

参展电话:13646399362(苏老师)

主讲申请:19991951101(王老师)

官方微信订阅号
Copyright © 中国国际石墨烯创新大会 版权所有     运营机构:北京现代华清材料科技发展有限责任公司
grapchina.org 京ICP备10026874号-12   grapchina.cn 京ICP备10026874号-23
京公网安备 11010802023402号
分享到: