Mauricio Terrones宾夕法尼亚州立大学 教授
Mauricio Terrones, born in Mexico City in 1968, obtained his B.Sc. degree in Engineering Physics with first class honors at Universidad Iberoamericana, and was distinguished as the Best Student of Mexico in Engineering Physics in 1992. In 1994 he started his doctorate degree with Sir Prof. Harold W. Kroto (Nobel Laureate, FRS), and received his D.Phil. degree from University of Sussex in 1998. He has co-authored more than 300 publications in international journals, and counts with more than 17,000 citations to his work (His H index is 71). For example, he has published in Nature, Science, Physical Review Letters, Nano Letters, Nature Nanotechnology, Nature Materials, Nature Communications, Nature Scientific Reports, Small, ACS Nano, etc. In 1999, he was awarded the Alexander von Humboldt Fellowship, and carried out research at the Max-Planck Institut für Metallforschung (Stuttgart, Germany). In 2000, he was recipient of the Mexican National Prize for Chemistry. He also received the Javed Husain Prize and the Albert Einstein medal from UNESCO in 2001, for his contributions to Carbon Nanoscience and Nanotechnology. In 2005, he received the TWAS Prize in Engineering Physics for his contributions in the field of carbon-based nanomaterials. This prize is given by the Academy of Sciences of the Developing world, and Mauricio is the youngest scientist ever to receive any TWAS award. In 2005, Terrones also received the “José Antonio Villaseñor y Sánchez” Prize, awarded by the governor of the state of San Luis Potosí, for his contributions in Nanoscience. He is member of the Mexican Academy of Sciences since 2002. In 2007, Terrones was elected the National Contact Point in Nanotechnology with the European Union. In 2012 he will be elected fellow of the American Association for the Advancement of Science (AAAS). Mauricio is also Associate Editor of Carbon, Journal of Materials Research and Nature Scientific Reports. Aged 45, he is Professor of Physics, Chemistry and Materials Science & Engineering with tenure at Penn State University, holds a chair of excellence at Universidad Carlos III de Madrid and is Distinguished Professor at Shinshu University. He is also the Founder Director of the Center for 2-Dimensional and Layered Materials at Penn State. His research now concentrates on the theory, synthesis and characterization of 2-D materials and nanotubes.
演讲题目：2-Dimensional Materials: From Doped Graphene, MoxW1-xS2 Monolayers to van der Waals Solids
内容摘要
This talk will discuss the synthesis of large-area, high-quality monolayers of nitrogen-, boron- and silicon-doped graphene sheets on Cu foils using ambient-pressure chemical vapor deposition (AP-CVD). Scanning tunneling microscopy (STM) and spectroscopy (STS) reveal that the defects in the doped graphene samples arrange in different geometrical configurations exhibiting different electronic and magnetic properties. Interestingly, these doped layers could be used as efficient molecular sensors and electronic devices. In addition, the synthesis of hybrid carbon materials consisting of sandwich layers of graphene layers and carbon nanotubes by a self-assembly route will be discussed. These films are energetically stable and could well find important applications as field emission sources, catalytic supports, gas adsorption materials and super capacitors.
Beyond graphene, the synthesis of other 2-Dimensional materials will be described. In particular, we will discuss the synthesis of WS2 and MoS2 triangular monolayers, as well as large area films using a high temperature sulfurization of WOx clusters deposited on insulating substrates. We will show that depending on the substrate and the sizes of the oxide clusters, various morphologies of layered dichalcogenides could be obtained. Alternative and facile routes to MoS2, MoxW1-xS2 and MoxW1-xSeS will be also discussed. In particular, it will be demonstrated that gradual concentrations of M, W, S and Se could be tuned within one single layer so that the electronic and optical properties could be tailored. In addition, photocurrent measurements on these chalcogenide materials will be presented. Our results indicate that the electrical response strongly depends on the laser photon energy. The excellent response observed to detect different photon wavelengths in MoS2, WS2 and WSe2 materials, suggest these materials could be used in the fabrication of novel ultrafast photo sensors.
From the theoretical stand point, we have found using first principles calculations, that by alternating individual layers of different metal chalcogenides (e.g. MoS2, WS2, WSe2 and MoSe2) with particular stackings, it is possible to generate direct band gap bi-layers ranging from 0.79 eV to 1.157 eV. Interestingly, in this direct band gap, electrons and holes are physically separated and localized in different layers. We foresee that the alternation of different chalcogenide layers would result in the fabrication of materials with unprecedented optical and physico-chemical properties. From the experimental stand point we will also show that it is possible to grow van der Waals solids by alternating layers of graphene, hBN, MoS2, WS2, and WSe2. Electronic and optical properties of these novel solids will also be described.
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